The NTBG020N090SC1 has an R DS(ON) of 20 milliohms (mΩ) with a V GS of 15 volts (I D = 60 A, T j = 25˚C), and an R DS(ON ) of 16 mΩ with a V GS of 18 volts (I D = 60 A, T j = 25˚C). Maximum continuous drain- source diode forward current (I SD ) is 148 A (V GS = −5 volts, T j = 25˚C), and maximum pulsed drain− source diode forward current (I SDM ) is 448 A (V GS = −5 volts, T j = 25˚C). The NTBG020N120SC1 has an R DS(ON) of 28 mΩ at a V GS of 20 volts (I D = 60 A, T j = 25˚C). Maximum I SD is 46 A (V GS = −5 volts, T j = 25˚C), and maximum I SDM is 392 A (V GS = −5 volts, T j = 25˚C).
Figure 2: The NTBG020N090SC1 and NTBG020N120SC1 N-channel SiC power MOSFETs both come in a D2PAK-7L package and differ primarily in their V (BR)DSS values of 900 and 1200 volts, respectively. (Image source: Steven Keeping, using material from ON Semiconductor)
Designing with SiC MOSFETs
Despite their advantages, designers looking to incorporate SiC MOSFETs into their traction inverter designs should be aware of a significant complication; the transistors have tricky gate drive requirements. Some of these challenges arise from the fact that compared to Si MOSFETs, SiC MOSFETs exhibit lower transconductance, higher internal gate resistance, and the gate turn− on threshold can be less than 2 volts. As a result, the gate must be pulled below ground (typically to −5 volts) during the off−state to ensure proper switching.
Figure 3: For the NTBG020N090SC1 SiC MOSFET, a high V GS is required to avoid thermal stress from high R DS(ON) . (Image source: ON Semiconductor)
we get technical
23
Powered by FlippingBook