Conclusion SiC power MOSFETs are a good option for high-efficiency and high- power-density traction inverters for EVs, but their electrical characteristics bring unique design challenges with respect to gate drivers and device protection. Adding to the design challenges, engineers must also ensure that their traction inverter design offers high-level isolation from the vehicle’s sensitive LV electronics.
As shown, to ease engineering development, ON Semiconductor offers a range of SiC MOSFETs, specialized gate drivers, and digital isolators to meet the demands of traction inverters, and strike a better balance between long-range and high performance for modern EVs.
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